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Ion-Beam Induced Silicide Formation: Markers and Moving Species

Published online by Cambridge University Press:  26 February 2011

L. S. Hung  and
J. W. Mayer
L. S. Hung
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

The moving species in near-noble metal suicide formation was investigated using embedded markers and Rutherford backscattering. With thermal annealing of Ni-silicides, Ni is the dominant diffusing species while in ion-induced reactions both Ni and Si diffuse across the suicide. This difference in behavior is not a result of the formation of amorphous Si during ion irradiation nor is it caused by release of Si. We propose that the diffusion of Si is associated with the formation of defects in the suicide layer generated within the collision cascade.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 197
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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