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Ion Induced Mixing of AlGaAs/GaAs Superlattices

Published online by Cambridge University Press:  25 February 2011

T. Venkatesan ,
S. A. Schwarz ,
P. Mei  and
H. W. Yoon
T. Venkatesan
Affiliation:
Bell Communications Research, Red Bank, NJ 07701-7020
S. A. Schwarz
Affiliation:
Bell Communications Research, Red Bank, NJ 07701-7020
P. Mei
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08854
H. W. Yoon
Affiliation:
Bell Communications Research, Red Bank, NJ 07701-7020
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Abstract

Subsequent to the implantation of certain ions, the thermal stability of AlGaAs/GaAs superlattices can be reduced, enabling mixing of the layers at temperatures where they would otherwise be stable. The mixed layers have intermediate alloy composition and are of good crystalline quality. As a result this process is of great value in device fabrication where a high degree of vertical and lateral bandgap control is desirable. This paper reviews our work in understanding the mechanism of diffusion, its dependence on varilous process parameters, and potential applications in device fabrication.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

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References

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