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Ion Implantation into Inp/InGaAs Heterostructures Grown by Movpe

Published online by Cambridge University Press:  21 February 2011

Wulf Häussler ,
J. W. Walter  and
J. Müller
Wulf Häussler
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Fed. Rep. Germany
J. W. Walter
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Fed. Rep. Germany
J. Müller
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Fed. Rep. Germany
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Abstract

Annealing of Beryllium implantations into epitaxial InP/InGaAs hetero-structures was investigated. Different ion energies were used to position the profile maximum in the InP cap, at the hetero-interface, or in the underlying InGaAs layer. By measuring the Be atom and carrier profiles, it is shown that annealing conditions necessary for optimum Be activation in the InP cap layer are compatible with good profile control for Be in InGaAs. There is a slight transfer of Be across the interface during annealing, which is important, if the pn-juntion is intended to be close to the hetero-interface.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 333
Copyright
Copyright © Materials Research Society 1989

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