Hostname: page-component-54dcc4c588-nx7b4 Total loading time: 0 Render date: 2025-10-12T02:35:42.165Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

Published online by Cambridge University Press:  21 February 2011

L. Simon ,
A. Mesu ,
J. J. Grob ,
T. Heiser  and
J. L. Balladore
L. Simon
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
A. Mesu
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
J. J. Grob
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
T. Heiser
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
J. L. Balladore
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
Get access

Abstract

We report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Borders, J. A., Picraux, S. T. and Beezhold, W., Appl. Phys. Lett. 18, 509 (1971).Google Scholar
2 Kimura, T., Kagiama, S. and Yugo, S., Thin Solid Films 81, 319 (1981).Google Scholar
3 Martin, P. and Daudin, B., J. Appl. Phys. 67 (6), 2908, 1990.Google Scholar
4 Kroko, L., Golecki, I. and Glass, H. L. in Ion Beam Processes in Advanced Electronic Materials and Device Technology, edited by Appleton, B.R., Eisen, F.H., Sigmon, T.W. (Mater. Res. SocProc. 45, Pittsburgh, PA, 1985) p. 323.Google Scholar
5 Nussupov, Kh., Sigleand, V.O., Bejsentihanov, N.B., Nucl. Instr. and Methods B 82, 69 (1993).Google Scholar
6 Spitzer, N. G., Lleinman, D. A. and Frish, C. J., Phys. Rev. 113, 133 (1959).Google Scholar
7 Ishikawa, J., Miyata, K., Tsuji, H.,Taya, T. and Takagi, T., Proc.9 th Symp. ISIAT (Tokyo), 503 (1986).Google Scholar
8 Durupt, P., Thesis, Université de Lyon (INIST T50/210 1983/52) (1983).Google Scholar
9 Simon, L. (private communication).Google Scholar
10 Bunker, J.N. and Armini, A.J., Nucl. Instr. and Methods B 39, 7 (1989).Google Scholar
11 Heera, V., Stoemenos, J., Kögler, R. and Skorupa, W., submitted to J. Appl. Phys. (1994).Google Scholar
12 Benson, K. J., Stoemenos, J. and Hemment, P. L. F., Thin Solid Films 191, 147 (1982).Google Scholar