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Ion Beam Slicing of Single Crystal Oxide ThinFilms

Published online by Cambridge University Press:  17 March 2011

S. Thevuthasan ,
V. Shutthanandan ,
W. Jiang  and
W. J. Weber
S. Thevuthasan
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352, theva@pnl.gov
V. Shutthanandan
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352
W. Jiang
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352
W. J. Weber
Affiliation:
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory (PNNL), Richland, WA 99352
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Abstract

Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO3 single crystals. Rutherford backscattering spectrometryalong with channeling (RBS/C) has been used to investigate the relativedisorder as a function of temperature from the samples that were irradiatedby 40 KeV hydrogen ions to a fluence of 5.0×1016 H+/cm2. Hydrogen profiles were also measured as afunction of annealing temperature to understand the role of hydrogen in theion slicing process. Film cleavage occurred during or after annealing at 570K, and cleaved film has been successfully transferred to a silicon substrateusing ceramic adhesive.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.2
Copyright
Copyright © Materials Research Society 2001

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