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Ion Beam Crystallography of Metal-Silicon Interfaces: Pd-Si(111)

Published online by Cambridge University Press:  15 February 2011

R. Tromp ,
E. J. Van Loenen ,
M. Iwami ,
R. Smeenk  and
F. W. Saris
R. Tromp
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam (The Netherlands)
E. J. Van Loenen
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam (The Netherlands)
M. Iwami
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam (The Netherlands)
R. Smeenk
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam (The Netherlands)
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam (The Netherlands)
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Extract

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium siuicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd2Si layers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 155
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Tromp, R., van Loenen, E. J., Smeenk, R., Iwami, M., Saris, F. W., Nava, F. and Ottaviani, G., submitted to Surf. Sci.Google Scholar
2 Smeenk, R., Tromp, R., Boerboom, H. and Saris, F. W., Nucl. Instrum. Methods, 195 (1982) 581.Google Scholar
3 Hiraki, A., J. Electrochem. Soc., 127 (12) (1980) 2662.CrossRefGoogle Scholar
3a Okuno, K., Ito, T., Iwami, M. and Hiraki, A., Solid State Commun., 34 (1980) 493.Google Scholar