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Ion Beam Assisted Texture Evolution during Thin Film Depositionof Metal Nitrides

Published online by Cambridge University Press:  17 March 2011

Bernd Stritzker ,
Jürgen W. Gerlach ,
Stephan Six  and
Bernd Rauschenbach
Bernd Stritzker
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
Jürgen W. Gerlach
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
Stephan Six
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
Bernd Rauschenbach
Affiliation:
Institut für Oberflächenmodifizierung, D-04318 Leipzig, Germany
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Abstract

Ion beam assisted deposition, i.e., the bombardment of thin films with abeam of energetic particles has become a highly developed tool for thepreparation of thin films. This technique provides thin films and coatingswith modified microstructure and properties. In this paper examples arepresented for the modifying of the structure: in-situ modification oftexture during ion beam assisted film growth and ion beam enhancedepitaxy.

The biaxial alignment of titanium nitride films prepared on Si(111) bynitrogen ion beam assisted deposition at room temperature was studied. Thebombardment perpendicular to the surface of the substrate causes an {001}alignment of crystallites. A 55° ion beam incidence angle produces both a{111} orientation relative to the surface and a {100} orientation relativeto the ion beam. This results in a totally fixed orientation of thecrystallites. The texture evolution is explained by the existence of openchanneling directions.

Epitaxial, hexagonal gallium nitride films were grown on c-plane sapphire bylow-energy nitrogen ion beam assisted deposition (≤ 25 eV). The ion energywas chosen to be less than the corrected bulk displacement energy to avoidthe formation of ion-induced point defects in the bulk. The results showthat GaN films with a nearly perfect {0002} texture are formed which havesuperior crystalline quality than films grown without ion irradiation. Themosaicity and the defect density are reduced.

By applying an assisting ion beam during pulsed laser deposition of aluminumnitride on the c-plane of sapphire, epitaxial, hexagonal films could beproduced. The results prove the beneficial influence of the ion beam on thecrystalline quality of the films. An optimum ion energy of 500 eV was foundwhere the medium tilt as well as the medium twist of the crystallites wasminimal.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O9.1
Copyright
Copyright © Materials Research Society 2001

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