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Investigation of Pt Bottom Electrodes for "In-Situ" Deposited Pb(Zr,Ti)O3 (PZT) thin Films

Published online by Cambridge University Press:  25 February 2011

Rainer Bruchhaus ,
Dana Pitzer ,
Oliver Eibl ,
Uwe Scheithauer  and
Wolfgang Hoesler
Rainer Bruchhaus
Affiliation:
Siemens AG, Corporate Research and Development, Munich, Germany
Dana Pitzer
Affiliation:
Siemens AG, Corporate Research and Development, Munich, Germany
Oliver Eibl
Affiliation:
Siemens AG, Corporate Research and Development, Munich, Germany
Uwe Scheithauer
Affiliation:
Siemens AG, Corporate Research and Development, Munich, Germany
Wolfgang Hoesler
Affiliation:
Siemens AG, Corporate Research and Development, Munich, Germany
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Abstract

The deposition of the bottom electrode plays a key role in the fabrication of ferroelectric capacitors. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and thereof formation of harmful dielectric layers.

In this paper we used Rutherford backscattering spectrometry (RBS), Auger electron spectrometry (AES) and transmission electron microscopy (TEM) to study Pt/Ti/SiO2/Si substrates with various thicknesses of the Ti and Pt layers. During heating up to about 450°C in vacuum the initial layer sequence remains unchanged. However, drastic changes occur when the electrodes are exposed to Ar/O2 atmosphere during heat treatment. Oxidation induced diffusion of Ti into Pt and oxidation of Ti were observed. A Pt electrode with a 100 nm thick Ti adhesion layer proved to be suitable for the "in-situ" deposition of PZT films.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 123
Copyright
Copyright © Materials Research Society 1992

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References

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