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Intrinsic Stress in Sputtered Thin Films

Published online by Cambridge University Press:  21 February 2011

Tai D. Nguyen ,
Tue Nguyen  and
James H. Underwood
Tai D. Nguyen
Affiliation:
Center for X-Ray Optics, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
Tue Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
James H. Underwood
Affiliation:
Center for X-Ray Optics, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
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Abstract

Understanding of the stress in thin films is important in controls of the properties of nanometer period x-ray multilayers. Stress evolution at the initial stages of thin film formation was studied by molecular dynamics simulation of Mo atoms impinging on a 5×5×5 unit cell Mo substrate. The simulation shows that the structure initially increases in a compressive state. The stress then decreases when the deposited atoms have covered the substrate surface. Measured stress of Ru films in Ru/C multilayers by laser curvature technique shows similar behavior to the simulated results.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 131
Copyright
Copyright © Materials Research Society 1995

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