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Interfacial Structures of Nickel Silicides in the SiaNi/Sic System

Published online by Cambridge University Press:  03 September 2012

Bae-Heng Tseng ,
Chia-Dar Hsieh  and
Show-Gin Wu
Bae-Heng Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C
Chia-Dar Hsieh
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C
Show-Gin Wu
Affiliation:
Department of Physics, National Tsing Hua University, Hsin-Chu, Taiwan, R.OC
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Abstract

A laterally uniform formation of NiSi2 at low temperature had been reported for the SiaNi/Sic system. In this work, the interfacial structure of NiSi2 is studied by the high-resolution electron microscopy. We observe an amorphous layer (5–10 nm in thickness) between Sic and NiSi2 in a Sia(300nm)/Ni(5Onm)/Sic sample after annealing at 450°C. The NiSi2 phase in this sample has a polycrystalline structure. We also find that a contaminated amorphous-Si film can not promote a reaction with Ni. A SIMS depth profile shows that this amorphous-Si layer is high in oxygen and carbon. In this case, the silicide formation is similar to the Ni/Sic system.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 261
Copyright
Copyright © Materials Research Society 1994

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References

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