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Interface Velocity Transients During Melting of a-Si/C-Si Thin Films

Published online by Cambridge University Press:  26 February 2011

J. Y. Tsao ,
M. J. Aziz ,
P. S. Peercy  and
M. O. Thompson
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. J. Aziz
Affiliation:
Harvard University, Cambridge, MA 02138
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M. O. Thompson
Affiliation:
Cornell University, Ithaca, NY 14853
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Abstract

We report transient conductance measurements of liquid/solid interface velocities during pulsed laser melting of amorphous Si (a-Si) films on crystalline Si (c-Si), and a more accurate, systematic procedure for analyzing these measurements than described in previous work [1]. From these analyses are extracted relations between the melting velocities of a-Si and c-Si at a given interface temperature, and between the temperatures during steady-state melting of a-Si and c-Si at a given interface velocity.

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References

REFERENCES

1 Thompson, M.O., Calvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G. and Chew, N.C., Phys. Rev. Lett. 52, 2360 (1984); and J.Y. Tsao, M.J. Aziz, M.O. Thompson and P.S. Peercy, Phys. Rev. Lett. 56, 2712 (1986).Google Scholar
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10 Note also that if the melting velocity is rapid, the heat flow into the underlying solid can be neglected, as discussed in Thompson, M.O., Liquid-Solid Interface Dynamics During Pulsed Laser Melting of Silicon-on-Sapphire (Ph.D thesis, Cornell University, 1984), pp. 105–109.Google Scholar
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13 Based on a heat-flow code written by Thompson, M.O..Google Scholar
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