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Published online by Cambridge University Press: 25 February 2011
Integrated heterostructure devices (IHDs) comprised of II-VI materials in multi-layered structures for light emitting diode (LED) and laser diode (LD) applications are described. These IHDs combine a light emission multilayer structure (wide band gap II-VI layers) with an abrupt or graded heterostructure (comprised of narrow band gap II-VI layers) for improved ohmic contact to the upper p-type layer of the light emitting structure.