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Influence of RTP on Vacancy Concentrations

Published online by Cambridge University Press:  10 February 2011

M. JACOB ,
P. Pichler ,
M. Wohs ,
H. Ryssel  and
R. Falster
M. JACOB
Affiliation:
Fraunhofer-Institut für Integrierte Schaltungen, Bauelementetechnologie, Schottkystrasse 10, 91058 Erlangen, Germany
P. Pichler
Affiliation:
Fraunhofer-Institut für Integrierte Schaltungen, Bauelementetechnologie, Schottkystrasse 10, 91058 Erlangen, Germany
M. Wohs
Affiliation:
Lehrstuhl für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Cauerstrasse 6, 91058 Erlangen, Germany
H. Ryssel
Affiliation:
Fraunhofer-Institut für Integrierte Schaltungen, Bauelementetechnologie, Schottkystrasse 10, 91058 Erlangen, Germany Lehrstuhl für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Cauerstrasse 6, 91058 Erlangen, Germany
R. Falster
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi 31, 28100 Novara, Italy
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Abstract

The increase and reduction of the vacancy concentration by rapid thermal processing (RTP) was investigated by platinum diffusion. Direct experimental evidence is presented for the consumption of vacancies during oxidation and for the introduction of vacancies during processing in ammonia and nitrogen. These results confirm the indirect conclusions from dopant diffusion and from the growth and shrinkage of extended defects. In addition, it was possible to establish an upper limit for the equilibrium concentration of vacancies at 1180 °C which is lower than previously reported values.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 129
Copyright
Copyright © Materials Research Society 1998

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References

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