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Influence of HCL on Rapid Thermal Oxides

Published online by Cambridge University Press:  10 February 2011

G. A. Hames ,
S. E. Beck ,
A. G. Gilicinski ,
W. K. Henson  and
J. J. Wortman
G. A. Hames
Affiliation:
Texas Instruments, Inc., 13536 N. Central Expressway, Dallas, TX, 75248
S. E. Beck
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA, 18195
A. G. Gilicinski
Affiliation:
Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA, 18195
W. K. Henson
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695
J. J. Wortman
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, NC, 27695
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Abstract

The influence of HCl on the quality of gate oxides grown by rapid thermal oxidation has been investigated. HCl was added to oxidation ambient for some rapid thermal oxides while for others the silicon surface was annealed in a partial HCl ambient prior to rapid thermal oxidation. Improvements in gate oxide integrity were monitored on MOS capacitors and MOSFET devices by I-V and C-V testing. The levels of chlorine incorporated in the oxide from the addition of HCl to the process was measured by secondary ion mass spectroscopy. Atomic force microscopy was performed to measure surface roughening during HCl pre-oxidation treatments.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 219
Copyright
Copyright © Materials Research Society 1996

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