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Increase in Schottky Barrier Height in the CoSi2/Si (100) Interface Caused by Hydrogen

Published online by Cambridge University Press:  25 February 2011

A. D. Marwick ,
M. O. Aboelfotoh  and
R. Casparis
A. D. Marwick
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598.
M. O. Aboelfotoh
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598.
R. Casparis
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

It is shown that the presence of 8 × 1015 hydrogen atoms/cm2 in the CoSi2/Si (100) interface causes an increase in the Schottky barrier height of 120 meV, and that passivation of dopants in the substrate is not the cause of this change. The data is evidence that the position of the Fermi level in this interface is controlled by defect-related interface states. After hydrogenation the Schottky barrier height agrees with that predicted by theory for Fermi level pinning by virtual gap states of the silicon.

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References

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