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Increase in Period of Oscillatory Coupling in Cu by Doping with Ni

Published online by Cambridge University Press:  03 September 2012

S.S.P. Parkin ,
C Chappertt  and
F. Herman
S.S.P. Parkin
Affiliation:
IBM Research Division, Almadén Research Center, 650 Harry Road, San Jose, C A 95120–6099.
C Chappertt
Affiliation:
Institut d'Rlectroniquc Fondamentale, Université Paris-Sud, Orsay, France.
F. Herman
Affiliation:
IBM Research Division, Almadén Research Center, 650 Harry Road, San Jose, C A 95120–6099.
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Abstract

The origin of oscillatory interlayer coupling via Cu is explored in sputtered Co/Cu Multilayers by varying the hole concentration in the copper layers by doping with elements of different valence. Detailed studies were carried out for a series of Cu-Ni alloys. The oscillation period of pure Cu is observed to increase monotonically with increasing Ni concentration and is almost doubled for 40 atomic % Ni. The increase in oscillation period can be accounted for by considering changes in the topology of (he Fermi surface of the alloy resulting from the change in band Tilling.

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