Hostname: page-component-54dcc4c588-xh45t Total loading time: 0 Render date: 2025-10-07T08:41:08.850Z Has data issue: false hasContentIssue false
  • English
  • Français

InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

W. Dobbelaere ,
J. De Boeck ,
W. De Raedt ,
J. Vanhellemont ,
G. Zou ,
M. Van Hove ,
B. Brijs ,
R. Mertens  and
G. Borghs
W. Dobbelaere
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
J. De Boeck
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
W. De Raedt
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
J. Vanhellemont
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
G. Zou
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
M. Van Hove
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
B. Brijs
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
R. Mertens
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
G. Borghs
Affiliation:
Interuniversity Micro-Electronics Center (IMEC vzw), 75 Kapeldreef, B-3001 Leuven, BELGIUM
Get access

Abstract

InAs and InAs0.85Sb0.15p-“i”-n structures were grown on InAs, GaAs and Si substrates by Molecular Beam Epitaxy. The structural quality of the layers is discussed using Transmission Electron Microscopy and Rutherford Back Scattering. The influence of the material quality on the 77 K current-voltage measurements is explained. The spectral response of the devices was measured demonstrating peak responsivities of 2.1 A/W at 3.5μm wavelength for InAs0.85Sb0.15 detectors with a 4.3 μm cut-off wavelength.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] See e.g. Lee, G.S., Lo, Y., Lin, Y.F., Bedair, S.M., and Laidig, W. D., Appl. Phys. Lett., 47(11), 1219–1221 (1985); J.-I. Chyi, S. Kalem, N.S. Kumar, C.W. Litton, and H. Morko4, Appl. Phys. Lett. 53(12), 1092-1094 (1988); M.Y. Yen, J. Appl. Phys. 64(6M, 3306-3309 (1988).CrossRefGoogle Scholar
[2] Dobbelaere, W., Boeck, J. De, Hove, M. Van, Deneffe, K., Raedt, W. De, Mertens, R. and Borghs, G., IEDM Techn. Dig. 717–720 (1989), Electron. Lett. 26(11), 259-261 (1990).Google Scholar
[3] Bubulac, L.O., Andrews, A. M., Gertner, E.R., and Cheung, D. T., Appl. Phys. Lett. 36(9), 734–736 (1980); P.K. Chiang, and S. M. Bedair, Appl. Phys. Lett., 46(4), 383-385 (1985); K. Mohammed, F. Capasso, R.A. Logan, J.P. Van Der Ziel, and A. L. Hutchinson, Electron. Lett. 22(4), 215-216 (1986); S.R. Kurtz, L.R. Dawson, Thomas E. Zipperian, and R.D. Whaley, IEEE, Electron Device Lett., 11(1), 54-56 (1990).Google Scholar
[4] Dobbelaere, W., Boeck, J. De and Borghs, G., Appl. Phys. Lett. 55(18), 1856–1858 (1989).Google Scholar
[5] Boeck, J. De, Dobbelaere, W., Hove, M. Van, Vanhellemont, J., Raedt, W. De, Vandervorst, W., Mertens, R. and borghs, G., Proceedings of MRS Spring Meeting Symposium V (Materials Research Symposium V (Materials Research Society, Pittsburgh, 1990), in press.Google Scholar
[6] Dobbelaere, W., Boeck, J. De, Mieghem, P. Van, Mertens, R. and Borghs, G., to be published in the Journal of Applied Physics, (February 1991).Google Scholar
[7] See e.g. Sun, Tai-Ping, Lee, Si-Chen and Yang, Sheng-Jenn, J. Appl. Phys. 67(11), 7092–7097 (1990).Google Scholar
[8] Dennis, P.N.J., Photodetectors, (Plenum Press, New York, 1986), p.22.Google Scholar