Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-09T20:24:03.399Z Has data issue: false hasContentIssue false
  • English
  • Français

Improving the Understanding of Ion-Beam-Induced Defect Formationand Evolution by Atomistic Computer Simulations

Published online by Cambridge University Press:  17 March 2011

Matthias Posselt
Matthias Posselt*
Affiliation:
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O.Box 510119, D-01314 Dresden, Germany
Get access

Abstract

The morphology of the as-implanted damage in silicon is investigated using arecently developed combination of time-ordered computer simulations based onthe binary collision approximation (BCA) with classical molecular dynamics(MD) calculations. The method is applied to determine the type and theamount of defects formed within the first nanosecond after ion impact. Thedepth profile and the total number of different defect species (vacancies,interstitials, disordered atoms, etc.) produced on average per incident ionare calculated for B+ (15 keV), P+ (5, 10, 20, 30keV), and As+ (15 keV) implantations. It is shown that the as-implanted defect structure depends not only on the nuclear energy depositionper ion but also explicitly on the ion mass. Therefore for each ion speciesthe damage morphology exhibits characteristic features. For heavy ions thepercentage of extended defects is higher than for light ions. In all casesinvestigated the number of free or isolated interstitials exceeds the amountof free vacancies. The results obtained allow a microscopic interpretationof the phenomenological model for the as-implanted damage employed inconventional BCA simulations in order to describe the dose dependence of theshape of ion range profiles. They can be also applied to get more realisticinitial conditions for the simulation of the defect kinetics duringpost-implantation annealing.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O2.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Posselt, M., Schmidt, B., Murthy, C. S., Feudel, T. and Suzuki, K., J. Electrochem. Soc. 144, 1495 (1997).Google Scholar
2. Jaraiz, M., Gilmer, G. H., Poate, J. M. and Rubia, T. Diaz de la, Appl. Phys. Lett. 68, 409 (1996).Google Scholar
3. Posselt, M., Schmidt, B., Feudel, T. and Strecker, N., Materials Science and Engineering B71, 128 (2000).Google Scholar
4. Caturla, M. J., Rubia, T. Diaz de la, Marques, L. A. and Gilmer, G. H., Phys. Rev. B54, 16683 (1996).Google Scholar
5. Stillinger, F. H. and Weber, T. A., Phys. Rev. B31, 5262 (1985).Google Scholar
6. Ziegler, J. F., Biersack, J. P. and Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).Google Scholar
7. Lindhard, J. and Scharff, M., Phys. Rev. 124, 128 (1961).Google Scholar
8. Berendsen, H. J. C., Postma, J. P. M., Gunsteren, W. F. van, DiNola, A. and Haak, J. R., J. Chem. Phys. 81, 3684 (1984).Google Scholar
9. Nordlund, K., Ghaly, M., Averback, R. S., Caturla, M., Rubia, T. Diaz de la and Taurus, J., Phys. Rev. B57, 7556 (1998).Google Scholar
10. Napolitani, E., Carnera, A., Schroer, E., Privitera, V., Priolo, F. and Moffat, S., Appl. Phys. Lett. 75, 1869 (1999).Google Scholar