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Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN

Published online by Cambridge University Press:  31 January 2011

Katsushi Fujii ,
Keiichi Sato ,
Takashi Kato ,
Tsutomu Minegishi  and
Takafumi Yao
Katsushi Fujii
Affiliation:
k.fujii@cir.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Miyagi, Japan
Keiichi Sato
Affiliation:
satok1@imr.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
Takashi Kato
Affiliation:
takashi_h_katou@fujifilm.co.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
Tsutomu Minegishi
Affiliation:
tmine@imr.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
Takafumi Yao
Affiliation:
tyao@cir.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
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Abstract

Photoelectrochemical properties of Ga- and N-face GaN grown by hydride vapor phase epitaxy (HVPE) were investigated. The properties were also compared with Ga-face GaN grown by metal-organic vapor phase epitaxy (MOVPE). The flatband potentials were in order of Ga-face GaN grown by MOVPE < N-face GaN < Ga-face GaN. The highest photocurrent density at zero bias was obtained from the N-face GaN. The photocurrent density was over 3 times larger than that of Ga-face GaN.

Keywords

energy generationIII-Vwater

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