Hostname: page-component-54dcc4c588-gwv8j Total loading time: 0 Render date: 2025-10-10T17:28:45.837Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Ferroelectric and Electrical Properties of Sol-Gel deposited Bi4Ti3Oi2 Thin Films by Multiple Rapid Thermal Annealing Techniques

Published online by Cambridge University Press:  01 February 2011

Hua. Wang  and
Minfang Ren
Hua. Wang
Affiliation:
Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China
Minfang Ren
Affiliation:
Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, China
Get access

Abstract

Ferroelectric Bi4Ti3O12 thin films were fabricated by sol-gel method with multiple rapid thermal annealing (MRTA) techniques on Pt/Ti/SiO2/p-Si substrates. The effect of annealing temperature on crystallinity, ferroelectric and electrical properties of Bi4Ti3O12 films derived by MRTA and by normal RTA were investigated. The results reveal that the grain size and the roughness of surface increase with the annealing temperature increase, but the maximal remnant polarization of Bi4Ti3O12

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D3.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable