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Impact of Boron and Gallium on Defects Production inSilicon

Published online by Cambridge University Press:  17 March 2011

Aurangzeb Khan ,
Nethaji Dharmarasu ,
Masafumi Yamaguchi ,
Kenji Araki ,
Tuong K. Vu ,
Tatsuo Saga ,
Takao Abe ,
Osamu Annzawa ,
M. Imaizumi  and
Sumio Matsuda
Aurangzeb Khan
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Nethaji Dharmarasu
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Masafumi Yamaguchi
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Kenji Araki
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Tuong K. Vu
Affiliation:
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
Tatsuo Saga
Affiliation:
Sharp Corporation, 282-1 Hajikami, Shinjo, Kitakatsuragi, Nara 639-2198, Japan
Takao Abe
Affiliation:
Shin-Etsu Handotai Co., Ltd, 2-13-1 Isoba, Annaka, Gunma 379-0196, Japan
Osamu Annzawa
Affiliation:
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
M. Imaizumi
Affiliation:
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
Sumio Matsuda
Affiliation:
National Space Development Agency of Japan, 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505, Japan
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Abstract

We report the results of comparison of radiation-induced defects (1 MeVelectrons) in n+-p-p+ Si diodes doped with gallium orboron ranging in concentration from 8 × 1014 to 5 × 1016 cm−3, together with the impact of oxygen onradiation –induced defects. Present results provide evidence for new defectsstates in addition to those previously reported in gallium- and boron-dopedSi. The combined boron and gallium data provide enough information to gainvaluable insight into the role of the dopants on radiation-induced defectsin Si. The interesting new future of our results is that the gallium appearsto strongly suppress the radiation induced defect, especially hole level EV+0.36 eV, which is thought to act as a recombination center.Similarly the dominant electron level at EC-0.18 eV in B-doped Si(which act as a donor) has not been observed in Ga-doped CZ-grown Si.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.7/R9.7
Copyright
Copyright © Materials Research Society 2001

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