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Hydrogen Transport in Phosphorus and Boron Dopedpolycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

N. H. Nickel  and
I. Kaiser
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany.
I. Kaiser
Affiliation:
Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, D-12489 Berlin, Germany.
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Abstract

Hydrogen diffusion in phosphorus and boron doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of dopants enhances hydrogen diffusion. The effective diffusion coefficient Deff is thermally activated and the activation energy varies between 0.1 and 0.4 eV. This is accompanied by a variation of the diffusion prefactor by 12 orders of magnitude. Using the theoretical diffusion prefactor the actual energy EA was calculated from Deff.EA also depends strongly on the Fermi energy and exhibits a similar dependence as the formation energies of H+ and H- in single crystal silicon.

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