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Hydrogen Stability in Hydrogenated Amorphous Silicon-Based Alloys

Published online by Cambridge University Press:  21 February 2011

W. Beyer ,
J. Herion ,
H. Wagner  and
U. Zastrow
W. Beyer
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-PV), Forschungszentrum Jülich, D-S170 Jülich, Germany
J. Herion
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-PV), Forschungszentrum Jülich, D-S170 Jülich, Germany
H. Wagner
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-PV), Forschungszentrum Jülich, D-S170 Jülich, Germany
U. Zastrow
Affiliation:
Institut für Schicht- und Ionentechnik (ISI-PV), Forschungszentrum Jülich, D-S170 Jülich, Germany
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Abstract

The thermal stability of hydrogen in amorphous silicon-based alloy films was studied by deuterium/hydrogen interdiffusion and hydrogen effusion experiments. Depending on the film structure, hydrogen stability is limited by hydrogen surface desorption or hydrogen diffusion. The hydrogen surface desorption energy is found to decrease with rising germanium content and to increase with rising nitrogen and carbon content. At T = 400°C, hydrogen diffusion is found to proceed in the germanium subnetwork for a-SiGe alloys and in the silicon subnetwork for a-SiN and a-SiC alloys.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 81
Copyright
Copyright © Materials Research Society 1991

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References

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