Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-06T22:16:34.411Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Passivation and Ozone Oxidation of Silicon Surface

Published online by Cambridge University Press:  10 February 2011

Akira Kurokawa ,
Ken Nakamura  and
Shingo Ichimura
Akira Kurokawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Ken Nakamura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Shingo Ichimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Get access

Abstract

The oxidation of H/Si(100) and H/Si(111) with high concentration ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for HSi(111). The dissociation rate of ozone molecule on H/Si was estimated to be ≃0.2 with a directional mass analyzer.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 37
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Kurokawa, A., Ichimura, S., Moon, D. W., Mat. Res. Sco. Symp. Proc., 477,359 (1997).Google Scholar
2. Nakamura, K., Kurokawa, A. and Ichimura, S., J. Vac. Sci. Technol., 15, 2441 (1997).Google Scholar
3. Ichimura, S., Hosokawa, S., Nonaka, H. and Arai, K., J. Vac. Sci. Technol., A9, 2369 (1991).Google Scholar
4. Hosokawa, S. and Ichimura, S., Rev. Sci. Instrum., 62, 1614 (1991).Google Scholar
5. Kurokawa, A. and Ichimura, S., Jpn. J. Appl. Phys., 34, L1606 (1995).Google Scholar
6. Flowers, M. C., Jonathan, N. B. H., Liu, Y. and Morris, A., J. chem. Phys., 102, 1034 (1995).Google Scholar
7. Gupta, P., Mak, C. H., Coon, P. A. and George, S. M., Phys. Rev., B40, 7739 (1989).Google Scholar
8. Engstrom, J. R. and Engel, T., Phys. Rev., B41, 1038 (1990).Google Scholar
9. Westermann, J., Nienhaus, H. and Monch, W., Surf. Sci., 311,101 (1994).Google Scholar