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Hydrogen Diffusion in Chalcopyrite Solar Cell Materials

Published online by Cambridge University Press:  10 February 2011

A. Weidinger ,
J. Krauser ,
Th. Riedle ,
R. Klenk ,
M. Ch. Lux-Steiner  and
M. V. Yakushev
A. Weidinger
Affiliation:
Hahn-Meitner Institute Berlin, Glienickerstr. 100, D-14109 Berlin, weidinger@hmi.de
J. Krauser
Affiliation:
Hahn-Meitner Institute Berlin, Glienickerstr. 100, D-14109 Berlin, weidinger@hmi.de
Th. Riedle
Affiliation:
Hahn-Meitner Institute Berlin, Glienickerstr. 100, D-14109 Berlin, weidinger@hmi.de
R. Klenk
Affiliation:
Hahn-Meitner Institute Berlin, Glienickerstr. 100, D-14109 Berlin, weidinger@hmi.de
M. Ch. Lux-Steiner
Affiliation:
Hahn-Meitner Institute Berlin, Glienickerstr. 100, D-14109 Berlin, weidinger@hmi.de
M. V. Yakushev
Affiliation:
Department of Physics, University of Salford, Salford M5 4WT, UK
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Abstract

Hydrogen diffusion in CuInSe 2 single crystals and CuInS2 thin films was studied by measuring the spreading of implantation profiles upon annealing. Deep implantation with an ion energy of 10 keV and sub-surface implantation with 300 eV were applied. The diffusion coefficients in both materials were found to be in the order of 10-14 to 10-13 cm2/s in the temperature range between 400 and 520 K.These fairly low diffusivities are typical for a trap and release transport process rather than intrinsic diffusion of interstitial hydrogen. In the polycrystalline CuInS2 films, hydrogen leaves the sample through the grain boundaries.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 177
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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