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Hole Drift Mobility in a-Si1−xCx:H

Published online by Cambridge University Press:  16 February 2011

Qing Gu ,
Qi Wang ,
E. A. Schiff ,
Yuañ-Min Li  and
Charles T. Malone
Qing Gu
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130, USA
Qi Wang
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130, USA
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244–1130, USA
Yuañ-Min Li
Affiliation:
Solarex Corp., Thin Film Division, 826 Newtown-Yardley Rd., Newtown, PA 18940, USA
Charles T. Malone
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
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Abstract

We present a summary of our recent measurements on hole drift mobilities in hydro-genated amorphous silicon-carbon alloys (a-Si1−xCx:H). Increasing the bandgap has a vastly smaller effect for the hole mobility than for electrons. In conjunction with previous drift Mobility Measurements in a-Si1−xCx:H and a-Si1−xGex:H, these hole measurements complete a simple pattern for the effects of bandgap modification on drift Mobilities: electron mobilities decline as the bandgap is increased beyond 1.72 eV or decreased below 1.72 eV, but hole mobilities are relatively unaffected.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 523
Copyright
Copyright © Materials Research Society 1994

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References

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