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Hillock formation and thermal stresses in thin Au films on Si substrates

Published online by Cambridge University Press:  01 February 2011

Linda Sauter ,
T. John Balk ,
Gerhard Dehm ,
Julie A. Nucci  and
Eduard Arzt
Linda Sauter
Affiliation:
Max Planck Institute for Metals Research and Institut für Metallkunde, University of Stuttgart, 70569 Stuttgart, Germany
T. John Balk
Affiliation:
Now at: University of Kentucky, Department of Chemical and Materials Engineering, Lexington, KY 40506, USA
Gerhard Dehm
Affiliation:
Now at: Erich Schmid Institut für Materialwissenschaft, Österreichische Akademie der Wissenschaften, and Department für Materialphysik, Montanuniversität Leoben, 8700 Leoben, Austria
Julie A. Nucci
Affiliation:
Max Planck Institute for Metals Research and Institut für Metallkunde, University of Stuttgart, 70569 Stuttgart, Germany
Eduard Arzt
Affiliation:
Max Planck Institute for Metals Research and Institut für Metallkunde, University of Stuttgart, 70569 Stuttgart, Germany
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Abstract

The wafer curvature technique was used to analyze stresses in fine-grained, 50 nm to 2 μm thick Au films on silicon substrates between room temperature and 500°C. The microstructural evolution was analyzed by scanning electron microscopy (SEM), focused ion beam (FIB) microscopy and transmission electron microscopy (TEM). In situ heating experiments inside a scanning electron microscope provided a comparison between the morphological development and the stress-temperature behavior of the film. Hillock formation was observed, but it can only partially account for the stress relaxation measured by the wafer curvature technique.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O5.2
Copyright
Copyright © Materials Research Society 2005

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