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High-Temperature SiC MOSFET Gas Sensors

Published online by Cambridge University Press:  01 February 2011

Kevin Matocha ,
Vinayak Tilak ,
Peter Sandvik  and
Jesse Tucker
Kevin Matocha
Affiliation:
Semiconductor Technology Laboratory, GE Global Research Center One Research Circle Niskayuna, NY 12309 USA email: matocha@research.ge.com
Vinayak Tilak
Affiliation:
Semiconductor Technology Laboratory, GE Global Research Center One Research Circle Niskayuna, NY 12309 USA email: matocha@research.ge.com
Peter Sandvik
Affiliation:
Semiconductor Technology Laboratory, GE Global Research Center One Research Circle Niskayuna, NY 12309 USA email: matocha@research.ge.com
Jesse Tucker
Affiliation:
Semiconductor Technology Laboratory, GE Global Research Center One Research Circle Niskayuna, NY 12309 USA email: matocha@research.ge.com
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Abstract

Due to tightening restrictions on combustion exhaust emissions, low-cost sensors are desired for monitoring NOx production in high-temperature exhaust streams. This paper reports the characterization of Silicon Carbide MOSFET NO sensors for use in combustion exhaust monitoring. SiC depletion-mode MOSFETs were fabricated using a thermally-grown silicon dioxide gate dielectric and a Pt catalytic metal gate electrode. SiC MOSFET gas sensors were characterized at temperatures as high as 525°C in an ambient of synthetic air and NO (50–200 ppm) for 30 hours with no degradation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A7.9
Copyright
Copyright © Materials Research Society 2005

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References

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