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High-Resolution Electron Microscopy of Planar Defects in Ain.

Published online by Cambridge University Press:  21 February 2011

Stuart Mckernan ,
M. Grant Norton  and
C. Barry Carter
Stuart Mckernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
M. Grant Norton
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
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Abstract

The defects which occur in polycrystalline aluminum nitride are very detrimental to the beneficial physical and electrical properties. 'Dome-like' or 'D' defects, consisting of a flat basal fault joined to a curved planar fault, are examined by high-resolution electron microscopy. The basal segments are shown to contain a thin ∼5Å layer of a second phase and are associated with a stacking-fault and an antiphase boundary. A structural model is proposed for the defect which incorporates a layer of alumina at the basal segment of the 'D' defect. The formation of thisdefect is discussed.

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