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High-Quality A-Si Films Prepared by the Direct Photo-Cvd Method

Published online by Cambridge University Press:  25 February 2011

S. Nakano ,
K. Wakisaka ,
M. Kameda ,
M. Isomura ,
T. Matsuyama ,
N. Nakamura ,
S. Tsuda ,
M. Ohnishi  and
Y. Kuwano
S. Nakano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
K. Wakisaka
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Kameda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Isomura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
T. Matsuyama
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
N. Nakamura
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
S. Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
M. Ohnishi
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
Y. Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13 Hashiridani, Hirakata City, Osaka, Japan
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Abstract

A high-efficiency integrated-type a-Si solar cell submodule with a size of 10cm × 10cm has been fabricated and a total area efficiency of 9.6% is obtained by using a high-quality p-layer doped with B(CH3)3 We have developed an advanced direct photo-CVD method. High-quallt” a-SI films with low tail characteristic energy and low light-induced degradation is prepared by this method. We have also studied the role of Si-H2 bonds on the light-induced effect. The result implies that Si-H bonds stabilize the defect states, resulting in a large light-induced degradation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 417
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Tsuda, S. et al.: Jpn. J. Appl. Phys. 26 (1987) 33 CrossRefGoogle Scholar
2. Kuwano, Y. et al.: J. Non-Cryst. Solids 97 & 98 (1987) 289 CrossRefGoogle Scholar
3. Nakamura, N. et al.: AIP Conf. Proc. No. 120 (1984) 303CrossRefGoogle Scholar
4. Nakano, S. et al.: Proc. 19th IEEE Photovol. Spec. Conf. (1987) 678Google Scholar
5. Staebler, D. L. et al.: Appl. Phys. Lett. 39 (1981) 733 CrossRefGoogle Scholar
6. Nakamura, N. et al.: J. Non-Cryst. Solids 59 & 60 (1983) 1139 CrossRefGoogle Scholar