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High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

R. Carluccio ,
A. Pecora ,
G. Fortunato ,
J. Stoemenos  and
N. Economou
R. Carluccio
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 Roma, ITALY
A. Pecora
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 Roma, ITALY
G. Fortunato
Affiliation:
IESS-CNR, Via Cineto Romano 42, 00156 Roma, ITALY
J. Stoemenos
Affiliation:
Aristotle University of Thessaloniki, Dep. of Physics, Thessaloniki, GREECE
N. Economou
Affiliation:
Aristotle University of Thessaloniki, Dep. of Physics, Thessaloniki, GREECE
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Abstract

Excimer laser crystallization of hydrogenated amorphous silicon has been investigated as a function of substrate temperature. At low substrate temperatures hydrogen out-diffusion strongly influences the film morphology, while at 420 °C homogeneous recrystallized films are obtained, as a result of the reduced solidification velocity. This process has been successfully tested by fabricating with the recrystalllized material thin-film transistors according to the bottom-gate configuration.

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References

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