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High Quality a-Si:H Films Grown at High Deposition Rates

Published online by Cambridge University Press:  15 February 2011

Yoram Lubianiker ,
Yanyang Tan ,
J. David Cohen  and
Gautam Ganguly
Yoram Lubianiker
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
Yanyang Tan
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
Gautam Ganguly
Affiliation:
Electrotechnical Laboratory, Tsukuba-shi, Ibaraki 305, Japan Solarex, Toano VA 23168
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Abstract

Intrinsic a-Si:H samples were grown with and without hydrogen (H2) dilution of silane at different growth rates. We find that the dilution leads to a considerable reduction in the defect density, in particular at high growth rates. The defect density is particularly low for samples grown using H2 dilution conditions at growth rates as high as 10 Å/sec. Using transient photocapacitance measurements we find evidence for a small concentration of microcrystallites embedded in the amorphous films. An increase in the microcrystalline fraction correlates with a decrease in the defect density.

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