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High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

Published online by Cambridge University Press:  07 January 2014

Yunxuan Yu ,
Xian Gong ,
Dong Liu ,
Yan Wang  and
Jinfeng Kang
Yunxuan Yu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Xian Gong
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Dong Liu
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China Peking University Shenzhen Graduate School, Shenzhen, 518055, China
Yan Wang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Jinfeng Kang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
*
*Email: kangjf@pku.edu.cn
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Abstract

The effect of Y dopant incorporated into ZTO with different Y ratios in Y-ZTO system on the performances of ZTO-based TFTs is investigated by using sol-gel process. The proper Y doped ZTO present both high film crystallization temperature and superior electrical properties as an active channel layer of TFTs. The fabricated YZTO-based TFTs with 11% Y show the excellent devices performance such as the channel field effect mobility of 1.756 cm2/Vs, SS of 2.13 V/dec, threshold voltage of 0.8V and on/off ratio of 3.12×106.

Keywords

oxideamorphoussol-gel

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1630: Symposium O – Adaptive Soft Matter through Molecular Networks , 2014 , mrsf13-1630-o03-17
Copyright
Copyright © Materials Research Society 2014 

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References

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