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Heterogeneous Reactions of GaAs Quantum Dots with Organometallic Precursors

Published online by Cambridge University Press:  28 February 2011

Winston A. Saunders ,
Robert B. Lee ,
Harry A. Atwater ,
Kerry J. Vahala ,
Richard C. Flagan  and
Peter C. Sercel
Winston A. Saunders
Affiliation:
Applied Physics, M. S. 128–95 California Institute of Technology, Pasadena, CA 91125
Robert B. Lee
Affiliation:
Applied Physics, M. S. 128–95 California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Applied Physics, M. S. 128–95 California Institute of Technology, Pasadena, CA 91125
Kerry J. Vahala
Affiliation:
Applied Physics, M. S. 128–95 California Institute of Technology, Pasadena, CA 91125
Richard C. Flagan
Affiliation:
Chemical Engineering, M. S. 210–41 California Institute of Technology, Pasadena, CA 91125
Peter C. Sercel
Affiliation:
Applied Physics, M. S. 128–95 California Institute of Technology, Pasadena, CA 91125
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Abstract

We report recent results on the homogeneous nucleation of GaAs quantum dots from organometallic precursors and subsequent heterogeneous nucleation of epitaxial regrowth of GaAs on the clusters. We find that clusters onto which we have regrown GaAs exhibit a much higher degree of faceting, whereas particles subject to che same thermal cycles but onto which no new GaAs has been grown, though crystalline, have highly irregular shapes. These results suggest that epitaxial regrowth exhibits selectivity in the growth rates on the various crystal facets akin to that found in bulk samples.

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References

REFERENCES

1. Sercel, P. C., Saunders, W. A., Vahala, K. J., Atwater, H. A., Flagan, R. C., Appl. Phys. Lett., 61, 696 (1992).Google Scholar
2. Schmitt-Rink, S., Miller, D. A. B., Chemia, D. S., Phys. Rev. B 35, 8113–8124 (1987).Google Scholar
3. Asai, H., J. Cryst. Growth 80, 425 (1987).Google Scholar
4. Jwang, J., Flaxgan, R. C., and Gregory, O. J., Appl. Phys. Letts. 49, 82 (1986).Google Scholar
5. Hung, C. H., Miquel, P. F., and Katz, J. L., J. Mat. Res. 7, 1861 (1992),Google Scholar
Hung, C. H., Miquel, P. F., and Katz, J. L., J. Mat. Res. 7, 1870 (1992).Google Scholar
6. Hersee, S., Barbier, E., and Blondeau, R., J. Cryst. Growth 77, 310 (1986).Google Scholar
7. Goldstein, A. N., Echer, C. M., and Alivisatos, A. P., Science 256, 1425 (1992).Google Scholar