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Heteroepitaxy of InSe/GaSe on Si(111) Substrates

Published online by Cambridge University Press:  01 February 2011

J. Jasinski ,
Z. Liliental-Weber ,
A. Chaiken ,
G.A. Gibson ,
K. Nauka ,
C.C. Yang  and
R. Bicknell
J. Jasinski
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
A. Chaiken
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA, USA
G.A. Gibson
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA, USA
K. Nauka
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA, USA
C.C. Yang
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA, USA
R. Bicknell
Affiliation:
Hewlett-Packard, Imaging and Printing Division, Corvallis, OR, USA
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Abstract

High quality growth of InSe on Si(111) was achieved by insertion of GaSe buffer layer. Rhombohedral polytypes were formed in both the InSe and GaSe layers. Twinning and stacking disorder was often detected in these materials due to their layered structure. Moreover, in samples with a thin GaSe layer, strong interdiffusion of indium into the GaSe layer was detected that resulted in the formation of an Inx Gay Se phase. The dominant threading defects present in these InSe/GaSe heterostructures were screw dislocations, which may act as nonradiative recombination centers.

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References

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