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Heteroepitaxial Growth of Sic on Si - Highly Mismatched System -

Published online by Cambridge University Press:  28 February 2011

Hiroyuki Matsunami
Hiroyuki Matsunami*
Affiliation:
Department of Electrical Engineering, Kyoto University, Kyoto 606, Japan
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Abstract

Single crystals of cubic(beta) SiC were heteroepitaxially grown on Si to ameliorate the large lattice mismatch of 20 %. The structure and the role of the carbonized layer used for crystal growth are discussed. Single crystals were successfully grown on Si(100) and(111). Antiphase domains on Si(100) were examined to obtain smooth surfaces. The use of Si(100) off-axis substrates oriented towards [011] allowed the successufulelimination of the antiphase domains. Anisotropy was found in the electrical properties of SiC on off-axis substrates. Possible applications are described.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 325
Copyright
Copyright © Materials Research Society 1988

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