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Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF2/Si(511) Structures

Published online by Cambridge University Press:  26 February 2011

Tanemasa Asano ,
Hiroshi Ishiwara  and
Seijiro Furukawa
Tanemasa Asano
Affiliation:
Department of Electrical Engineering and Computer Science, Santa Clara University, Santa Clara, CA 95053
Hiroshi Ishiwara
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
Seijiro Furukawa
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
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Abstract

Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 sec after the growth at 550° C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures.

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References

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