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Hall Effect Measurements On SixGe1−x Bulk Alloys

Published online by Cambridge University Press:  15 February 2011

T. Mchedlidze  and
I. Yonenaga
T. Mchedlidze
Affiliation:
Komatsu Electronic Metals Co.Ltd., 2612 Shinomiya, Hiratsuka, 254, JAPAN
I. Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
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Abstract

Carrier transport measurement results for SixGe1−x bulk alloys with 0.03≤x≤0.9, grown by the Czochralski method are presented. Both monocrystalline (x=0.03 and x=0.23) and polycrystalline (x=0.12, 0.25, 0.4, 0.5, 0.75, 0.9) samples were analyzed. In all samples additional charge carriers were created during growth or/and cooling of crystals. With n-type starting materials only alloy with x=0.9 revealed n-type conductivity, all other alloys were of ptype. Creation of acceptors in the SixGe1−x alloy grown by Czochralski method is maximal for 0.4≤x≤0.75.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 381
Copyright
Copyright © Materials Research Society 1997

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