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Hall Effect Measurement System for Characterization of Doped Single Crystal Diamond

Published online by Cambridge University Press:  07 February 2013

Isil Berkun ,
Shannon N. Demlow ,
Nutthamon Suwanmonkha ,
Timothy P. Hogan  and
Timothy A. Grotjohn
Isil Berkun
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Shannon N. Demlow
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Nutthamon Suwanmonkha
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Timothy P. Hogan
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A.
Timothy A. Grotjohn
Affiliation:
Michigan State University Electrical and Computer Engineering, East Lansing, MI, U.S.A. Fraunhofer USA Center for Coatings and Laser Applications, East Lansing, MI, U.S.A
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Abstract

A temperature dependent Hall Effect measurement system with software based data acquisition and control was built and tested. Transport measurements are shown for boron-doped single crystal diamond (SCD) films deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor. The influence of Ohmic contacts and temperature control accuracy are studied. For a temperature range of 300K-700K IV curves, Hall mobilities and carrier concentrations are presented.

Keywords

diamondelectrical propertiesphysical vapor deposition (PVD)

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References

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