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The Growth, Steady State and Decay of the Photocarrier Population at low Temperatures

Published online by Cambridge University Press:  16 February 2011

Minh Q. Tran ,
P. Stradins  and
H. Fritzsche
Minh Q. Tran
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, USA
P. Stradins
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, USA
H. Fritzsche
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, USA
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Abstract

We used the transient infrared photoconductivity to measure the rise and fall of the non-equilibrium photocarrier concentration n at helium temperatures and the conditions for recombination. The growth rate of n was found to be only a few percent of the electron-hole pair generation rate G in agreement with LESR data of Street and Biegelsen. The saturation value of n is about 1017cm−3 and nearly independent of G. After turning off the generation light, the residual n requires an hour to decrease by a factor 2 but it can be made to recombine in seconds by infrared light.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 431
Copyright
Copyright © Materials Research Society 1994

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References

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