Hostname: page-component-54dcc4c588-trf7k Total loading time: 0 Render date: 2025-10-07T20:12:57.369Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Single Crystal Si/NiSi2/Si(100) and Si/CoSi2/Si(100) Structures by Molecular Beam Epitaxy and Furnace Annealing

Published online by Cambridge University Press:  25 February 2011

R. T. Tung ,
D. J. Eaglesham ,
F. Schrey  and
J. P. Sullivan
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. P. Sullivan
Affiliation:
Univ. of Pennsylvania, Dept. of Materials Science, Philadelphia, PA 19104
Get access

Abstract

Uniform, single crystal Si/NiSi2/Si(100) and Si/CoSi2/Si(100) structures were fabricated by molecular beam epitaxy and furnace annealing. A Si template technique and a post-growth anneal at ∼960°C led to high quality buried NiSi2 layers with thickness ∼1000Å. The conditions for fabricating high quality buried CoSi2 layers by the recently proposed allotaxy process were studied and discussed. The endotaxial growth of buried CoSi2 layers in Si(100) was also studied.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Saitoh, S., Ishiwara, H. and Furukawa, S., Appl. Phys. Lett. 37, 203 (1980).Google Scholar
2. Bean, J. C. and Poate, J. M., Appl. Phys. Lett. 37, 634 (1980).Google Scholar
3. Stiles, M. D. and Hamann, D. R., Phys. Rev. B 40, 1349 (1989).Google Scholar
4. Mattheiss, L. F. and Hamann, D. R., Phys. Rev. B 37, 10623 (1988).Google Scholar
5. Tung, R. T., Gibson, J. M., and Levi, A. F. J., Appl. Phys. Lett. 48, 1264 (1986).Google Scholar
6. White, A. E., Short, K. T., Dynes, R. C., Garno, J. P., and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987).Google Scholar
7. Itoh, M., Kinoshita, M., Ajioka, T., Itoh, M., and Inada, T., Appl. Surface Sci. 41/42, 262 (1989).Google Scholar
8. Sullivan, J. P., Tung, R. T., and Schrey, F., J. Appl. Phys. 72, 478 (1992).Google Scholar
9. Tung, R. T., Eaglesham, D. J., Schrey, F., and Sullivan, J. P., submitted J. Appl. Phys.Google Scholar
10. Mantl, S. and Bay, H. L., Appl. Phys. Lett. 61, 267 (1992).Google Scholar
11. Jimenez, J. R., Hsiung, L. M., Rajan, K., Schowalter, L. J., Hashimoto, S., Thompson, R. D., and Iyer, S. S., Appl. Phys. Lett. 57, 2811 (1990).Google Scholar
12. George, T. and Fathauer, R. W., Appl. Phys. Lett. 59, 3249 (1991).Google Scholar