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Growth of Silicon-on-Insulator Films using a Line-Source Electron Beam

Published online by Cambridge University Press:  15 February 2011

J. A. Knapp  and
S. T. Picraux
J. A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

A swept line-source electron beam has been used to study unseeded Si-on-insulator crystallization at beam scan speeds of 150–1500 cm/s. For a particular sample configuration a maximum linear crystallization velocity of ~ 350 cm/s was observed. At higher sweep speeds, competing nucleation occurred at intervals across the film. Both the limit in crystallization velocity and the intervals between nucleation are tentatively explained by a simple model.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 557
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work performed at Sandia National Laboratories supported by the U. S. Department of Energy under contract number DE-ACO4-76DP00789. Mat. Res.

References

REFERENCES

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