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Growth of PbSSe On Heteroepitaxial BaF2/Si Substrates

Published online by Cambridge University Press:  25 February 2011

T. K. Chu ,
C. Huber ,
F. Santiago ,
A. Martinez ,
H. Zogg ,
S. Blunier ,
C. Maissen ,
A. P. Taylor  and
L. J. Schowalter
T. K. Chu
Affiliation:
Naval Surface Warfare Center, Silver Spring, Maryland, USA
C. Huber
Affiliation:
Naval Surface Warfare Center, Silver Spring, Maryland, USA
F. Santiago
Affiliation:
Naval Surface Warfare Center, Silver Spring, Maryland, USA
A. Martinez
Affiliation:
Naval Surface Warfare Center, Silver Spring, Maryland, USA
H. Zogg
Affiliation:
Swiss Federal Institute of Technology, Zurich, Switzerland
S. Blunier
Affiliation:
Swiss Federal Institute of Technology, Zurich, Switzerland
C. Maissen
Affiliation:
Swiss Federal Institute of Technology, Zurich, Switzerland
A. P. Taylor
Affiliation:
Rensselaer Polytechnic Institute, Troy, New York, USA
L. J. Schowalter
Affiliation:
Rensselaer Polytechnic Institute, Troy, New York, USA
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Abstract

Heteroepitaxial films of (111)BaF2/CaF2 on (111)silicon, and (111)BaF2 on (100)silicon are used as substrates for the growth of IV-VI semiconductors. X-ray diffraction measurements show that p-type PbSxSe1-x(0.4 < × < 0.5) films grown on BaF2/CaF2/Si(111) substrates have bi-crystalline (111) and (100) characteristics. This, combined with thermal stress may cause the heteroepitaxy to peel off from the silicon. Films grown on BaF2(111)/Si(100) substrates display only the (111) peaks, and are robust with respect to thermal strain.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 483
Copyright
Copyright © Materials Research Society 1991

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References

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