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Growth of (GaAs)1−x (Si2)x Metastable Alloys using Migration-Enhanced Epitaxy

Published online by Cambridge University Press:  16 February 2011

T. Sudersena Rao  and
Y. Horikoshi
T. Sudersena Rao
Affiliation:
NTT Basic Research Laboratories, Tokyo 180, Japan.
Y. Horikoshi
Affiliation:
NTT Basic Research Laboratories, Tokyo 180, Japan.
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Abstract

Epitaxial (GaAs)1−x (Si2)x metastable alloys have been grown on GaAs (100) substrates using Migration-Enhanced Epitaxy in the composition range of 0<x<0.25. The lattice constant a0 of the alloys was found to decrease with increasing Si content from 0.56543nm at x=0 to 0.5601nm at x=0.25. Double-crystal x-ray diffraction rocking curve measurements and cross-sectional transmission electron microscopy studies made on a 10 period (GaAs)1−x(Si2)x/GaAs strained layer superlattice indicated sharp and abrupt interfaces. High crystalline quality GaAs has been grown on Si substrates using (GaAs)0.80(Si2)0.20/GaAs strained layer superlattices as buffer layers.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 151
Copyright
Copyright © Materials Research Society 1991

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References

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