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Growth of GaAs, InxGa1−xAs, and AlxGa1−xAs on GaAs (111)B Substrates by Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

K. Yang ,
L. J. Schowalter ,
B. K. Laurich  and
D. L. Smith
K. Yang
Affiliation:
Center for Integrated Electronics and Department of Physics, Rensselaer Polytechnic Institute, Troy NY 12180
L. J. Schowalter
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
B. K. Laurich
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
D. L. Smith
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

We have studied the growth of GaAs, InxGa1−xAs, and AlxGa1−xAs on on-axis GaAs (111)B substrates by MBE. RHEED patterns are used to identify different growth conditions. Using the optimized growth parameters, GaAs and Al0.3Ga0.7As films with surface defect densities (observed under an optical microscope) of less than 50 cm−2 were routinely achieved. No significant differences in surface morphology and carrier concentration were found between As4 and As2 if their mass fluxes are the same. A Hall mobility of 30,000 cm2V−1s−1 at 77 K was obtained for a GaAs film with a free electron concentration of 2×1015cm−3.

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References

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