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Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

Published online by Cambridge University Press:  22 February 2011

Yasuaki Hirano  and
Taroh Inada
Yasuaki Hirano
Affiliation:
College of Engineering, Hosei University Roganei, Tokyo 184, Japan
Taroh Inada
Affiliation:
College of Engineering, Hosei University Roganei, Tokyo 184, Japan
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Single crystal β-SiC films have been fabricated on (100)Si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The substrate temperature during the deposition ranged from 600 to 1100°C. The film properties were analyzed by RHEED and x-ray diffraction measurements. RBS measurements and TEM observations have also been made to investigate the film properties. The single crystal β-SiC films grow at and above 1000°C on (100) substrates. The activation energy is found to be around 1.1 eV for the crystallization process.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 569
Copyright
Copyright © Materials Research Society 1991

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References

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