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Growth Mechanism of Hydrogen Clusters

Published online by Cambridge University Press:  15 February 2011

N. H. Nickel ,
G. B. Anderson ,
N. M. Johnson  and
J. Walker
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Rudower Chaussee 5, 12489 Berlin, F. R. Germany.
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, USA.
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, USA.
J. Walker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, USA.
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Abstract

It is demonstrated that the exposure of polycrystalline silicon (poly-Si) to monatomic hydrogen results in the formation of H clusters. These H stabilized platelets appear in the near-surface region ( 100 nm) and are predominantly oriented along {111} crystallographic planes. Platelet concentrations of ≈5×1015, 1.5×1016-cm−3, and 2.4×1017 cm−3 were observed in nominally undoped poly-Si, phosphorous doped poly-Si (P=1017 cm−3), and phosphorous doped single crystal silicon (P>3×1018 cm−3), respectively. Results obtained on doped c-Si demonstrate that platelet generation occurs only at Fermi-level positions of Ec -EF < 0.4 eV.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 153
Copyright
Copyright © Materials Research Society 1997

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References

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