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Growth Kinetics for Propagation of Si-Network

Published online by Cambridge University Press:  25 February 2011

M Azuma ,
H Shirai ,
J. Hanna  and
I Shimizu
M Azuma
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan, 227
H Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan, 227
J. Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan, 227
I Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama, Japan, 227
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Abstract

Chemical reactions were systematically investigated with regard to the propagation of Si-network in the vicinity of the growing surface by using various precursors, SiHn, SiHnFm, and SiHnCim (n+m≤3) generated by plasma-induced decomposition of SiH4, SiF4, SiH2Cl2 and SiHCl3. Atomic hydrogen was an effective agent to promote the propagation reaction due to its strong chemical affinity for silicon and its ability to diffuse through the Si-network. A preliminary analysis was made of the kinetics of the propagation reactions.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 57
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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