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Growth and Characterization of Inas Quantum Dots on Silicon

Published online by Cambridge University Press:  10 February 2011

L. Hansen ,
A. Ankudinov ,
F. Bensing ,
J. Wagner ,
G. Ade ,
P. Hinze ,
V. Wagner ,
J. Geurts  and
A. Waag
L. Hansen
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
A. Ankudinov
Affiliation:
on leave from loffe Institute, Polytechnicheskaya 26, St. Petersburg, Russia
F. Bensing
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
J. Wagner
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
G. Ade
Affiliation:
Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
P. Hinze
Affiliation:
Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
V. Wagner
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
J. Geurts
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
A. Waag
Affiliation:
Physikalisches Institut EP III, Am Hubland, 97074 Wiirzburg, Germany
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Abstract

Up to 1011 cm−2 InAs quantum dots (QD) can be grown on Silicon(001) by molecular beam epitaxy. This very new material system is on the one hand interesting with regard to the integration of optoelectronics with silicon technology on the other hand it offers new insight into the formation of QDs. We report on RHEED, TEM and Raman studies about (in-) coherence of the QDs and on an according to our knowledge so far unknown dewetting transition in this material system. The results are being discussed on the basis of a thermodynamic model, assuming a liquid-like behavior of a strained adlayer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 33
Copyright
Copyright © Materials Research Society 2000

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References

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