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Growth and Characterisation of 4H-SiC MESFET structures grown by Hot-Wall CVD

Published online by Cambridge University Press:  21 March 2011

U. Forsberg ,
A. Henry ,
Ö. Danielsson ,
N. Rorsman ,
J. Eriksson ,
Q. Wahab ,
L. Storasta ,
M. K. Linnarsson  and
E. Janzén
U. Forsberg
Affiliation:
Department of Physics and Measurement Technology, Linköping University SE-681 83 Linköping, Sweden
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University SE-681 83 Linköping, Sweden
Ö. Danielsson
Affiliation:
Department of Physics and Measurement Technology, Linköping University SE-681 83 Linköping, Sweden
N. Rorsman
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
J. Eriksson
Affiliation:
Department of Microelectronics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
Q. Wahab
Affiliation:
Department of Physics and Measurement Technology, Linköping University SE-681 83 Linköping, Sweden
L. Storasta
Affiliation:
Department of Physics and Measurement Technology, Linköping University SE-681 83 Linköping, Sweden
M. K. Linnarsson
Affiliation:
Solid State Electronics, Royal Institute of Technology, SE-164 40 Kista, Sweden
E. Janzén
Affiliation:
Department of Physics and Measurement Technology, Linköping University SE-681 83 Linköping, Sweden
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Abstract

Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Paisley, M.J., Irvine, K.G., Kordina, O., Singh, R., Palmour, J.W., Carter, C.H. Jr Preprint MRS San Francisco 1999 Google Scholar
2. Eriksson, J., Rorsman, N., Zirath, H, Linarsson, M.K., Jonsson, R., Wahab, Q. and Rudner, S., Conference paper ECSCRM2000, GermanyGoogle Scholar